First-principles modelling of magnetic tunnel junctions

نویسنده

  • I. I. Oleinik
چکیده

Magnetic tunnel junctions (MTJ) are promising candidates for applications in spintronic devices such as magnetic random access memories, read heads and sensors [1]. The MTJs consist of two ferromagnetic layers separated by an insulating barrier layer. The physical quantity measured for signal detection is the tunnelling magnetoresistance (TMR), i.e. the relative difference in the resistance between parallel and antiparallel magnetizations of the electrodes. It was found that the TMR could be as high as 30% at room temperature in tunnel junctions based on ferromagnetic 3d-metal electrodes when alumina is used as the barrier layer (for a recent review, see [2]).

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تاریخ انتشار 2000